Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications
Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/81289 http://hdl.handle.net/10220/47457 |
| _version_ | 1826115531014406144 |
|---|---|
| author | Lee, Kwang Hong Bao, Shuyu Lin, Yiding Wang, Yue Li, Wei Zhang, Lin Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng Anantha, P. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lee, Kwang Hong Bao, Shuyu Lin, Yiding Wang, Yue Li, Wei Zhang, Lin Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng Anantha, P. |
| author_sort | Lee, Kwang Hong |
| collection | NTU |
| description | Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article. |
| first_indexed | 2024-10-01T03:56:41Z |
| format | Journal Article |
| id | ntu-10356/81289 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:56:41Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/812892020-03-07T13:57:22Z Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications Lee, Kwang Hong Bao, Shuyu Lin, Yiding Wang, Yue Li, Wei Zhang, Lin Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng Anantha, P. School of Electrical and Electronic Engineering Singapore-MIT Alliance Programme Germanium Silicon DRNTU::Engineering::Electrical and electronic engineering Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic–electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic–electronic chip on an Si platform will be highlighted at the end of this article. NRF (Natl Research Foundation, S’pore) Published version 2019-01-14T05:26:12Z 2019-12-06T14:27:31Z 2019-01-14T05:26:12Z 2019-12-06T14:27:31Z 2017 Journal Article Lee, K. H., Bao, S., Lin, Y., Li, W., Anantha, P., Zhang, L., . . . Tan, C. S. (2017). Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. Journal of Materials Research, 32(21), 4025-4040. doi:10.1557/jmr.2017.324 0884-2914 https://hdl.handle.net/10356/81289 http://hdl.handle.net/10220/47457 10.1557/jmr.2017.324 en Journal of Materials Research © 2017 Materials Research Society. All rights reserved. This paper was published in Journal of Materials Research and is made available with permission of Materials Research Society. 16 p. application/pdf |
| spellingShingle | Germanium Silicon DRNTU::Engineering::Electrical and electronic engineering Lee, Kwang Hong Bao, Shuyu Lin, Yiding Wang, Yue Li, Wei Zhang, Lin Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng Anantha, P. Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title_full | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title_fullStr | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title_full_unstemmed | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title_short | Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| title_sort | hetero epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications |
| topic | Germanium Silicon DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/81289 http://hdl.handle.net/10220/47457 |
| work_keys_str_mv | AT leekwanghong heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT baoshuyu heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT linyiding heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT wangyue heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT liwei heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT zhanglin heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT micheljurgen heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT fitzgeraldeugenea heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT tanchuanseng heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications AT ananthap heteroepitaxyofhighqualitygermaniumfilmonsiliconsubstrateforoptoelectronicintegratedcircuitapplications |