Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy

Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equ...

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Bibliographic Details
Main Authors: Li, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., Wang, X. P., Li, H. Y., Lo, G. Q.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Multilevel high-resistance states
Resistive switching random access memory (RRAM)
Impedance spectroscopy
Online Access:https://hdl.handle.net/10356/81371
http://hdl.handle.net/10220/39539

Internet

https://hdl.handle.net/10356/81371
http://hdl.handle.net/10220/39539

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