Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy
Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equ...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/81371 http://hdl.handle.net/10220/39539 |
| _version_ | 1824455397865422848 |
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| author | Li, H. K. Chen, T. P. Hu, S. G. Liu, P. Liu, Y. Lee, P. S. Wang, X. P. Li, H. Y. Lo, G. Q. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, H. K. Chen, T. P. Hu, S. G. Liu, P. Liu, Y. Lee, P. S. Wang, X. P. Li, H. Y. Lo, G. Q. |
| author_sort | Li, H. K. |
| collection | NTU |
| description | Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equivalent circuit consisting of the major components Rs, R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with DC bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model. |
| first_indexed | 2025-02-19T03:37:34Z |
| format | Journal Article |
| id | ntu-10356/81371 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:37:34Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/813712020-03-07T13:57:25Z Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy Li, H. K. Chen, T. P. Hu, S. G. Liu, P. Liu, Y. Lee, P. S. Wang, X. P. Li, H. Y. Lo, G. Q. School of Electrical and Electronic Engineering Multilevel high-resistance states Resistive switching random access memory (RRAM) Impedance spectroscopy Multilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equivalent circuit consisting of the major components Rs, R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with DC bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model. Accepted version 2016-01-04T06:24:24Z 2019-12-06T14:29:29Z 2016-01-04T06:24:24Z 2019-12-06T14:29:29Z 2015 Journal Article Li, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., et al. (2015). Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy. IEEE Transactions on Electron Devices, 62(8), 2684-2688. 0018-9383 https://hdl.handle.net/10356/81371 http://hdl.handle.net/10220/39539 10.1109/TED.2015.2445339 en IEEE Transactions on Electron Devices © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TED.2015.2445339]. 5 p. application/pdf |
| spellingShingle | Multilevel high-resistance states Resistive switching random access memory (RRAM) Impedance spectroscopy Li, H. K. Chen, T. P. Hu, S. G. Liu, P. Liu, Y. Lee, P. S. Wang, X. P. Li, H. Y. Lo, G. Q. Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title | Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title_full | Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title_fullStr | Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title_full_unstemmed | Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title_short | Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy |
| title_sort | study of multilevel high resistance states in hfox based resistive switching random access memory by impedance spectroscopy |
| topic | Multilevel high-resistance states Resistive switching random access memory (RRAM) Impedance spectroscopy |
| url | https://hdl.handle.net/10356/81371 http://hdl.handle.net/10220/39539 |
| work_keys_str_mv | AT lihk studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT chentp studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT husg studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT liup studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT liuy studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT leeps studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT wangxp studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT lihy studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy AT logq studyofmultilevelhighresistancestatesinhfoxbasedresistiveswitchingrandomaccessmemorybyimpedancespectroscopy |