Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phas...

Full description

Bibliographic Details
Main Authors: Wang, Xiaoshan, Wang, Zhiwei, Zhang, Jindong, Wang, Xiang, Zhang, Zhipeng, Wang, Jialiang, Zhu, Zhaohua, Li, Zhuoyao, Liu, Yao, Hu, Xuefeng, Qiu, Junwen, Hu, Guohua, Chen, Bo, Wang, Ning, He, Qiyuan, Chen, Junze, Yan, Jiaxu, Zhang, Wei, Hasan, Tawfique, Li, Shaozhou, Li, Hai, Zhang, Hua, Wang, Qiang, Huang, Xiao, Huang, Wei
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
DRNTU::Engineering::Materials
Metal Semiconductor Heterostructures
Solution Phase Epitaxy
Online Access:https://hdl.handle.net/10356/81389
http://hdl.handle.net/10220/47481

Internet

https://hdl.handle.net/10356/81389
http://hdl.handle.net/10220/47481

Similar Items