MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...
| 主要な著者: | , , , , , , |
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| その他の著者: | |
| フォーマット: | Journal Article |
| 言語: | English |
| 出版事項: |
2016
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| 主題: | |
| オンライン･アクセス: | https://hdl.handle.net/10356/81535 http://hdl.handle.net/10220/39575 |