MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...

詳細記述

書誌詳細
主要な著者: Singh, Nandan, Ho, Charles Kin Fai, Tina, Guo Xin, Mohan, Manoj Kumar Chandra, Lee, Kenneth Eng Kian, Wang, Hong, Lam, Huy Quoc
その他の著者: Temasek Laboratories
フォーマット: Journal Article
言語:English
出版事項: 2016
主題:
オンライン・アクセス:https://hdl.handle.net/10356/81535
http://hdl.handle.net/10220/39575