MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...
主要な著者: | , , , , , , |
---|---|
その他の著者: | |
フォーマット: | Journal Article |
言語: | English |
出版事項: |
2016
|
主題: | |
オンライン・アクセス: | https://hdl.handle.net/10356/81535 http://hdl.handle.net/10220/39575 |