MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrica...
| Автори: | , , , , , , |
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| Формат: | Journal Article |
| Мова: | English |
| Опубліковано: |
2016
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| Предмети: | |
| Онлайн доступ: | https://hdl.handle.net/10356/81535 http://hdl.handle.net/10220/39575 |
| _version_ | 1826124812817268736 |
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| author | Singh, Nandan Ho, Charles Kin Fai Tina, Guo Xin Mohan, Manoj Kumar Chandra Lee, Kenneth Eng Kian Wang, Hong Lam, Huy Quoc |
| author2 | Temasek Laboratories |
| author_facet | Temasek Laboratories Singh, Nandan Ho, Charles Kin Fai Tina, Guo Xin Mohan, Manoj Kumar Chandra Lee, Kenneth Eng Kian Wang, Hong Lam, Huy Quoc |
| author_sort | Singh, Nandan |
| collection | NTU |
| description | We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μm) devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is O.51 A/W without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems. |
| first_indexed | 2024-10-01T06:26:49Z |
| format | Journal Article |
| id | ntu-10356/81535 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:26:49Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/815352020-09-26T22:18:36Z MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System Singh, Nandan Ho, Charles Kin Fai Tina, Guo Xin Mohan, Manoj Kumar Chandra Lee, Kenneth Eng Kian Wang, Hong Lam, Huy Quoc Temasek Laboratories Antireflection coatings Device fabrications We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μm) devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is O.51 A/W without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems. Published version 2016-01-05T08:28:23Z 2019-12-06T14:33:11Z 2016-01-05T08:28:23Z 2019-12-06T14:33:11Z 2015 Journal Article Singh, N., Ho, C. K. F., Tina, G. X., Mohan, M. K. C., Lee, K. E. K., Wang, H., et al. (2015). MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. Journal of Nanomaterials, 2015, 436851-. 1687-4110 https://hdl.handle.net/10356/81535 http://hdl.handle.net/10220/39575 10.1155/2015/436851 en Journal of Nanomaterials © 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 6 p. application/pdf |
| spellingShingle | Antireflection coatings Device fabrications Singh, Nandan Ho, Charles Kin Fai Tina, Guo Xin Mohan, Manoj Kumar Chandra Lee, Kenneth Eng Kian Wang, Hong Lam, Huy Quoc MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title | MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title_full | MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title_fullStr | MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title_full_unstemmed | MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title_short | MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System |
| title_sort | mocvd growth and fabrication of high power mutc photodiodes using ingaas inp system |
| topic | Antireflection coatings Device fabrications |
| url | https://hdl.handle.net/10356/81535 http://hdl.handle.net/10220/39575 |
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