Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes

Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes

In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficienc...

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Bibliographic Details
Main Authors: Zhang, Yi Ping, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Wang, Lian Cheng, Kyaw, Zabu, Hasanov, Namig, Zhu, Bin Bin, Lu, Shun Peng, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2017
Subjects:
Light-emitting diodes
Quantum-well, -wire and -dot devices
Online Access:https://hdl.handle.net/10356/81899
http://hdl.handle.net/10220/42287

Internet

https://hdl.handle.net/10356/81899
http://hdl.handle.net/10220/42287

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