GeSn-on-insulator substrate formed by direct wafer bonding

GeSn-on-insulator substrate formed by direct wafer bonding

GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge 1- xSnx layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO2 on Ge 1- xSnx, the bonding of the donor wafer to a second Si (00...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Elemental semiconductors
Germanium
Online Access:https://hdl.handle.net/10356/81989
http://hdl.handle.net/10220/41088

Internet

https://hdl.handle.net/10356/81989
http://hdl.handle.net/10220/41088

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