Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films...

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Bibliographic Details
Main Authors: Fan, Zhen, Deng, Jinyu, Wang, Jingxian, Liu, Ziyan, Yang, Ping, Xiao, Juanxiu, Yan, Xiaobing, Dong, Zhili, Wang, John, Chen, Jingsheng
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Ferroelectric thin films
Online Access:https://hdl.handle.net/10356/82422
http://hdl.handle.net/10220/40010

Internet

https://hdl.handle.net/10356/82422
http://hdl.handle.net/10220/40010

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