Ferroelectricity emerging in strained (111)-textured ZrO2 thin films
(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/82422 http://hdl.handle.net/10220/40010 |
| _version_ | 1811676556606570496 |
|---|---|
| author | Fan, Zhen Deng, Jinyu Wang, Jingxian Liu, Ziyan Yang, Ping Xiao, Juanxiu Yan, Xiaobing Dong, Zhili Wang, John Chen, Jingsheng |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Fan, Zhen Deng, Jinyu Wang, Jingxian Liu, Ziyan Yang, Ping Xiao, Juanxiu Yan, Xiaobing Dong, Zhili Wang, John Chen, Jingsheng |
| author_sort | Fan, Zhen |
| collection | NTU |
| description | (Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films. Our theoretical analyses suggest that the strain imposed on the ZrO2 (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO2, and the compressive strain along certain ⟨11-2⟩ directions may further stabilize the o-phase. Experimentally ZrO2thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO2thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO2films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO2films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed. |
| first_indexed | 2024-10-01T02:23:21Z |
| format | Journal Article |
| id | ntu-10356/82422 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:23:21Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/824222023-07-14T15:49:03Z Ferroelectricity emerging in strained (111)-textured ZrO2 thin films Fan, Zhen Deng, Jinyu Wang, Jingxian Liu, Ziyan Yang, Ping Xiao, Juanxiu Yan, Xiaobing Dong, Zhili Wang, John Chen, Jingsheng School of Materials Science & Engineering Ferroelectric thin films (Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films. Our theoretical analyses suggest that the strain imposed on the ZrO2 (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO2, and the compressive strain along certain ⟨11-2⟩ directions may further stabilize the o-phase. Experimentally ZrO2thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO2thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO2films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO2films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed. NRF (Natl Research Foundation, S’pore) Published version 2016-02-19T07:03:07Z 2019-12-06T14:55:17Z 2016-02-19T07:03:07Z 2019-12-06T14:55:17Z 2016 Journal Article Fan, Z., Deng, J., Wang, J., Liu, Z., Yang, P., Xiao, J., et al. (2016). Ferroelectricity emerging in strained (111)-textured ZrO2 thin films. Applied Physics Letters, 108(1), 012906-. 0003-6951 https://hdl.handle.net/10356/82422 http://hdl.handle.net/10220/40010 10.1063/1.4939660 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939660]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | Ferroelectric thin films Fan, Zhen Deng, Jinyu Wang, Jingxian Liu, Ziyan Yang, Ping Xiao, Juanxiu Yan, Xiaobing Dong, Zhili Wang, John Chen, Jingsheng Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title | Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title_full | Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title_fullStr | Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title_full_unstemmed | Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title_short | Ferroelectricity emerging in strained (111)-textured ZrO2 thin films |
| title_sort | ferroelectricity emerging in strained 111 textured zro2 thin films |
| topic | Ferroelectric thin films |
| url | https://hdl.handle.net/10356/82422 http://hdl.handle.net/10220/40010 |
| work_keys_str_mv | AT fanzhen ferroelectricityemerginginstrained111texturedzro2thinfilms AT dengjinyu ferroelectricityemerginginstrained111texturedzro2thinfilms AT wangjingxian ferroelectricityemerginginstrained111texturedzro2thinfilms AT liuziyan ferroelectricityemerginginstrained111texturedzro2thinfilms AT yangping ferroelectricityemerginginstrained111texturedzro2thinfilms AT xiaojuanxiu ferroelectricityemerginginstrained111texturedzro2thinfilms AT yanxiaobing ferroelectricityemerginginstrained111texturedzro2thinfilms AT dongzhili ferroelectricityemerginginstrained111texturedzro2thinfilms AT wangjohn ferroelectricityemerginginstrained111texturedzro2thinfilms AT chenjingsheng ferroelectricityemerginginstrained111texturedzro2thinfilms |