Ferroelectricity emerging in strained (111)-textured ZrO2 thin films
(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films...
| Main Authors: | , , , , , , , , , |
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| 其他作者: | |
| 格式: | Journal Article |
| 语言: | English |
| 出版: |
2016
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| 主题: | |
| 在线阅读: | https://hdl.handle.net/10356/82422 http://hdl.handle.net/10220/40010 |