High-speed silicon modulators for the 2  μm wavelength band

High-speed silicon modulators for the 2  μm wavelength band

The 2 μm wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach–Zehnder interfero...

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Bibliographic Details
Main Authors: Cao, Wei, Hagan, David, Thomson, David J., Nedeljkovic, Milos, Knights, Andy, Wang, Junjia, Gardes, Frederic, Zhang, Weiwei, Liu, Shenghao, Li, Ke, Xin, Guo, Wang, Wanjun, Wang, Hong, Reed, Graham T., Mashanovich, Goran Z., Littlejohns, Callum George, Shaif-Ul Alam, Mohamed Said Rouifed
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Silicon Modulators
Wavelength Band
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/82959
http://hdl.handle.net/10220/47618

Internet

https://hdl.handle.net/10356/82959
http://hdl.handle.net/10220/47618

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