Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-...

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Bibliografiske detaljer
Main Authors: Zhang, Yiping, Zhang, Zi-Hui, Tan, Swee Tiam, Hernandez-Martinez, Pedro Ludwig, Zhu, Binbin, Lu, Shunpeng, Kang, Xue Jun, Sun, Xiao Wei, Demir, Hilmi Volkan
Andre forfattere: School of Electrical and Electronic Engineering
Format: Journal Article
Sprog:English
Udgivet: 2017
Fag:
Doping
Light emitting diodes
Online adgang:https://hdl.handle.net/10356/83365
http://hdl.handle.net/10220/42545

Internet

https://hdl.handle.net/10356/83365
http://hdl.handle.net/10220/42545

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