Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step
Silicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the abi...
| Główni autorzy: | , , , , , , |
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| Kolejni autorzy: | |
| Format: | Journal Article |
| Język: | English |
| Wydane: |
2016
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| Hasła przedmiotowe: | |
| Dostęp online: | https://hdl.handle.net/10356/83420 http://hdl.handle.net/10220/41429 |