Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Ga-rich InGaP materials are attractive applications for yellow-green spectral range optoelectronics such as light-emitting diodes and solar cells on silicon substrate. Bulk, Ga-rich InGaP films grown by metalorganic chemical vapor deposition on SiGe virtual substrates were investigated in the V/III...

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Bibliographic Details
Main Authors: Kim, TaeWan, Wang, Bing, Wang, Cong, Kohen, David A., Hwang, Jeong Woo, Shin, Jae Cheol, Kang, Sang-Woo, Michel, Jürgen
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2017
Subjects:
III-V semiconductors
Germanium
Online Access:https://hdl.handle.net/10356/83472
http://hdl.handle.net/10220/42610

Internet

https://hdl.handle.net/10356/83472
http://hdl.handle.net/10220/42610

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