Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has b...

Full description

Bibliographic Details
Main Authors: Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Photodiodes
Semiconductors
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/83836
http://hdl.handle.net/10220/49130

Internet

https://hdl.handle.net/10356/83836
http://hdl.handle.net/10220/49130

Similar Items