Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has b...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Online Access: | https://hdl.handle.net/10356/83836 http://hdl.handle.net/10220/49130 |
| _version_ | 1811678677810806784 |
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| author | Kim, Munho Huang, Hsien-Chih Kim, Jeong Dong Chabak, Kelson D. Kalapala, Akhil Raj Kumar Zhou, Weidong Li, Xiuling |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Kim, Munho Huang, Hsien-Chih Kim, Jeong Dong Chabak, Kelson D. Kalapala, Akhil Raj Kumar Zhou, Weidong Li, Xiuling |
| author_sort | Kim, Munho |
| collection | NTU |
| description | β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga2O3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga2O3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ∼10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. The realization of MacEtch's applicability to β-Ga2O3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage. |
| first_indexed | 2024-10-01T02:57:04Z |
| format | Journal Article |
| id | ntu-10356/83836 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:57:04Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/838362020-03-07T14:02:42Z Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity Kim, Munho Huang, Hsien-Chih Kim, Jeong Dong Chabak, Kelson D. Kalapala, Akhil Raj Kumar Zhou, Weidong Li, Xiuling School of Electrical and Electronic Engineering Photodiodes Semiconductors DRNTU::Engineering::Electrical and electronic engineering β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga2O3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga2O3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ∼10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. The realization of MacEtch's applicability to β-Ga2O3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage. Published version 2019-07-04T07:05:58Z 2019-12-06T15:32:59Z 2019-07-04T07:05:58Z 2019-12-06T15:32:59Z 2018 Journal Article Kim, M., Huang, H.-C., Kim, J. D., Chabak, K. D., Kalapala, A. R. K., Zhou, W., & Li, X. (2018). Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity. Applied Physics Letters, 113(22), 222104-. doi:10.1063/1.5053219 0003-6951 https://hdl.handle.net/10356/83836 http://hdl.handle.net/10220/49130 10.1063/1.5053219 en Applied Physics Letters © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s). 5 p. application/pdf |
| spellingShingle | Photodiodes Semiconductors DRNTU::Engineering::Electrical and electronic engineering Kim, Munho Huang, Hsien-Chih Kim, Jeong Dong Chabak, Kelson D. Kalapala, Akhil Raj Kumar Zhou, Weidong Li, Xiuling Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title | Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title_full | Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title_fullStr | Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title_full_unstemmed | Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title_short | Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity |
| title_sort | nanoscale groove textured β ga2o3 by room temperature inverse metal assisted chemical etching and photodiodes with enhanced responsivity |
| topic | Photodiodes Semiconductors DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/83836 http://hdl.handle.net/10220/49130 |
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