Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has b...
Main Authors: | Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/83836 http://hdl.handle.net/10220/49130 |
Similar Items
-
Investigating the suitability of using avalanche photodiodes or non-standard photodetectors as colour sensors
by: Zhang, Li Xiong
Published: (2024) -
Investigation of the effect of dead space on frequency response of Avalanche Photodiodes
by: Heng, Jillian Swee Teng
Published: (2016) -
Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
by: Meng, Q. Q., et al.
Published: (2018) -
Ge-on-Si avalanche photodiodes with photon trapping nanostructures for sensing and optical quantum applications
by: Wu, Shaoteng, et al.
Published: (2023) -
Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
by: Liao, Yikai, et al.
Published: (2023)