Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Show other versions (1)

High quality germanium(Ge)epitaxialfilm is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) dopedGe seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Gegrowth with As gradually reduce...

Full description

Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Wang, Bing, Wang, Cong, Yoon, Soon Fatt, Michel, Jurgen, Fitzgerald, Eugene A., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2016
Subjects:
Germanium
Elemental semiconductors
Online Access:https://hdl.handle.net/10356/84177
http://hdl.handle.net/10220/41651

Internet

https://hdl.handle.net/10356/84177
http://hdl.handle.net/10220/41651

Similar Items