Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
High quality germanium(Ge)epitaxialfilm is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) dopedGe seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Gegrowth with As gradually reduce...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2016
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| Online Access: | https://hdl.handle.net/10356/84177 http://hdl.handle.net/10220/41651 |
| _version_ | 1826118873753059328 |
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| author | Lee, Kwang Hong Bao, Shuyu Wang, Bing Wang, Cong Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lee, Kwang Hong Bao, Shuyu Wang, Bing Wang, Cong Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng |
| author_sort | Lee, Kwang Hong |
| collection | NTU |
| description | High quality germanium(Ge)epitaxialfilm is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) dopedGe seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Gegrowth with As gradually reduced to zero at high temperature (HT, at 650 °C), (iii) pure Gegrowth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Geepitaxialfilm with a thickness of ∼1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Gefilm. |
| first_indexed | 2024-10-01T04:50:39Z |
| format | Journal Article |
| id | ntu-10356/84177 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:50:39Z |
| publishDate | 2016 |
| record_format | dspace |
| spelling | ntu-10356/841772020-03-07T14:00:34Z Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer Lee, Kwang Hong Bao, Shuyu Wang, Bing Wang, Cong Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng School of Electrical and Electronic Engineering Germanium Elemental semiconductors High quality germanium(Ge)epitaxialfilm is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) dopedGe seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Gegrowth with As gradually reduced to zero at high temperature (HT, at 650 °C), (iii) pure Gegrowth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Geepitaxialfilm with a thickness of ∼1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Gefilm. NRF (Natl Research Foundation, S’pore) Published version 2016-11-29T08:48:38Z 2019-12-06T15:39:55Z 2016-11-29T08:48:38Z 2019-12-06T15:39:55Z 2016 Journal Article Lee, K. H., Bao, S., Wang, B., Wang, C., Yoon, S. F., Michel, J., et al. (2016). Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer. AIP Advances, 6(2), 025028-. 2158-3226 https://hdl.handle.net/10356/84177 http://hdl.handle.net/10220/41651 10.1063/1.4943218 en AIP Advances © 2016 The Author(s) (published by American Institute of Physics). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 8 p. application/pdf |
| spellingShingle | Germanium Elemental semiconductors Lee, Kwang Hong Bao, Shuyu Wang, Bing Wang, Cong Yoon, Soon Fatt Michel, Jurgen Fitzgerald, Eugene A. Tan, Chuan Seng Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title_full | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title_fullStr | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title_full_unstemmed | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title_short | Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer |
| title_sort | reduction of threading dislocation density in ge si using a heavily as doped ge seed layer |
| topic | Germanium Elemental semiconductors |
| url | https://hdl.handle.net/10356/84177 http://hdl.handle.net/10220/41651 |
| work_keys_str_mv | AT leekwanghong reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT baoshuyu reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT wangbing reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT wangcong reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT yoonsoonfatt reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT micheljurgen reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT fitzgeraldeugenea reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer AT tanchuanseng reductionofthreadingdislocationdensityingesiusingaheavilyasdopedgeseedlayer |