Novel RF process monitoring test structure for silicon devices

Novel RF process monitoring test structure for silicon devices

This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitance...

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Bibliographic Details
Main Authors: Sia, Choon Beng, Ong, Beng Hwee, Lim, Kok Meng, Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo, Alam, Tariq
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2009
Online Access:https://hdl.handle.net/10356/84919
http://hdl.handle.net/10220/5990

Internet

https://hdl.handle.net/10356/84919
http://hdl.handle.net/10220/5990

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