Novel RF process monitoring test structure for silicon devices
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitance...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/84919 http://hdl.handle.net/10220/5990 |
| _version_ | 1826128296902918144 |
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| author | Sia, Choon Beng Ong, Beng Hwee Lim, Kok Meng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo Alam, Tariq |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sia, Choon Beng Ong, Beng Hwee Lim, Kok Meng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo Alam, Tariq |
| author_sort | Sia, Choon Beng |
| collection | NTU |
| description | This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects. |
| first_indexed | 2024-10-01T07:22:39Z |
| format | Journal Article |
| id | ntu-10356/84919 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:22:39Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/849192020-03-07T13:57:21Z Novel RF process monitoring test structure for silicon devices Sia, Choon Beng Ong, Beng Hwee Lim, Kok Meng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo Alam, Tariq School of Electrical and Electronic Engineering This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects. Published version 2009-08-03T01:34:55Z 2019-12-06T15:53:37Z 2009-08-03T01:34:55Z 2019-12-06T15:53:37Z 2005 2005 Journal Article Sia, C. B., Ong, B. H., Lim, K. M., Yeo, K. S., Do, M. A., Ma, J. G., et al. (2005). Novel RF process monitoring test structure for silicon devices. IEEE Transactions on Semiconductor Manufacturing, 18(2), 246-253. 0894-6507 https://hdl.handle.net/10356/84919 http://hdl.handle.net/10220/5990 10.1109/TSM.2005.845095 en IEEE transactions on semiconductor manufacturing IEEE Transactions on Semiconductor Manufacturing © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 9 p. application/pdf |
| spellingShingle | Sia, Choon Beng Ong, Beng Hwee Lim, Kok Meng Yeo, Kiat Seng Do, Manh Anh Ma, Jianguo Alam, Tariq Novel RF process monitoring test structure for silicon devices |
| title | Novel RF process monitoring test structure for silicon devices |
| title_full | Novel RF process monitoring test structure for silicon devices |
| title_fullStr | Novel RF process monitoring test structure for silicon devices |
| title_full_unstemmed | Novel RF process monitoring test structure for silicon devices |
| title_short | Novel RF process monitoring test structure for silicon devices |
| title_sort | novel rf process monitoring test structure for silicon devices |
| url | https://hdl.handle.net/10356/84919 http://hdl.handle.net/10220/5990 |
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