Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...
| Hlavní autoři: | , |
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| Médium: | Journal Article |
| Jazyk: | English |
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2009
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| On-line přístup: | https://hdl.handle.net/10356/84920 http://hdl.handle.net/10220/4658 |