Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths

Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beaminduced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most use...

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Hlavní autoři: Ong, Vincent K. S., Kurniawan, Oka.
Další autoři: School of Electrical and Electronic Engineering
Médium: Journal Article
Jazyk:English
Vydáno: 2009
Témata:
On-line přístup:https://hdl.handle.net/10356/84920
http://hdl.handle.net/10220/4658