Correlation between oxide trap generation and negative-bias temperature instability

Evidence shows that substantial interface degradation under negative-bias temperature (NBT) stressing does not result in any apparent oxide trap generation. The link between NBT instability and oxide trap generation is actually found in the recoverable hole-trapping component (R) of the former. When...

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Bibliographic Details
Main Authors: Boo, A. A., Teo, Z. Q., Leong, K. C., Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/85049
http://hdl.handle.net/10220/11335