Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing
We present experimental evidence of a thermally activated transformation of negative-bias-temperature-stress-induced transient hole trapping at preexisting oxide traps into more permanent trapped holes in the ultrathin oxynitride gate p-MOSFET. The transformation is also shown to correlate with the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/85060 http://hdl.handle.net/10220/13459 |