Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure

The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. XPS study shows a decrease in...

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Bibliographic Details
Main Authors: Duan, Tian Li, Pan, Ji Sheng, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Gallium Oxide
Gallium Nitride
Online Access:https://hdl.handle.net/10356/85429
http://hdl.handle.net/10220/48222

Internet

https://hdl.handle.net/10356/85429
http://hdl.handle.net/10220/48222

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