Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. XPS study shows a decrease in...
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/85429 http://hdl.handle.net/10220/48222 |
| _version_ | 1824453206809247744 |
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| author | Duan, Tian Li Pan, Ji Sheng Ang, Diing Shenp |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Duan, Tian Li Pan, Ji Sheng Ang, Diing Shenp |
| author_sort | Duan, Tian Li |
| collection | NTU |
| description | The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. XPS study shows a decrease in the Ga 3d and N 1s core level binding energy after a high-temperature PDA, implying a decrease of the interface defect density and the associated positive trapped-charge. From Hall-effect measurement, the density and mobility of the two-dimensional electron gas (2DEG) are found to decrease and increase, respectively, after PDA, supporting the XPS results. The XPS data, however, reveal a clear Ga-O signal for all samples and no apparent change in the Ga-O to Ga-N bond ratio for the range of annealing temperatures studied. These findings imply that the observed improvement in 2DEG mobility (and the associated decrease of interface defect density) should be ascribed to the structural change of the disordered GaOx interfacial layer formed during the atomic-layer-deposition of the Al2O3. |
| first_indexed | 2024-10-01T07:56:42Z |
| format | Journal Article |
| id | ntu-10356/85429 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:56:42Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/854292020-03-07T13:57:27Z Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure Duan, Tian Li Pan, Ji Sheng Ang, Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Gallium Oxide Gallium Nitride The interface electronic structures of GaN and GaN/AlGaN/GaN samples, capped with atomic-layer-deposited Al2O3 and subjected to varying post-deposition annealing (PDA) temperatures, are investigated by X-ray photoelectron spectroscopy (XPS) and Hall-effect measurement. XPS study shows a decrease in the Ga 3d and N 1s core level binding energy after a high-temperature PDA, implying a decrease of the interface defect density and the associated positive trapped-charge. From Hall-effect measurement, the density and mobility of the two-dimensional electron gas (2DEG) are found to decrease and increase, respectively, after PDA, supporting the XPS results. The XPS data, however, reveal a clear Ga-O signal for all samples and no apparent change in the Ga-O to Ga-N bond ratio for the range of annealing temperatures studied. These findings imply that the observed improvement in 2DEG mobility (and the associated decrease of interface defect density) should be ascribed to the structural change of the disordered GaOx interfacial layer formed during the atomic-layer-deposition of the Al2O3. MOE (Min. of Education, S’pore) Published version 2019-05-16T03:42:31Z 2019-12-06T16:03:38Z 2019-05-16T03:42:31Z 2019-12-06T16:03:38Z 2015 Journal Article Duan, T. L., Pan, J. S., & Ang, D. S. (2015). Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure. ECS Journal of Solid State Science and Technology, 4(9), P364-P368. doi:10.1149/2.0081509jss 2162-8769 https://hdl.handle.net/10356/85429 http://hdl.handle.net/10220/48222 10.1149/2.0081509jss en ECS Journal of Solid State Science and Technology © 2015 The Electrochemical Society. All rights reserved. This paper was published in ECS Journal of Solid State Science and Technology and is made available with permission of The Electrochemical Society. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Gallium Oxide Gallium Nitride Duan, Tian Li Pan, Ji Sheng Ang, Diing Shenp Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title_full | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title_fullStr | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title_full_unstemmed | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title_short | Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure |
| title_sort | effect of post deposition annealing on the interface electronic structures of al2o3 capped gan and gan algan gan heterostructure |
| topic | DRNTU::Engineering::Electrical and electronic engineering Gallium Oxide Gallium Nitride |
| url | https://hdl.handle.net/10356/85429 http://hdl.handle.net/10220/48222 |
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