Ripple rotation on ion sputtered Si (100)
Controllable process of ion sputtered rippling is of significance for the generation of nanostructures on technologically important Si surface. Si(100) was irradiated with 30 kV focused Ga+ ions at various incidence angles. It was found that ripple only formed at 30° incidence angle. At low ion dose...
| Główni autorzy: | , |
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| Kolejni autorzy: | |
| Format: | Journal Article |
| Język: | English |
| Wydane: |
2013
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| Dostęp online: | https://hdl.handle.net/10356/85520 http://hdl.handle.net/10220/17279 |