Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process

Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process

Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated. The Si-CMOS layer is temporarily bonded on a Si handle wafer. Anoth...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Wang, Yue, Wang, Bing, Zhang, Li, Sasangka, Wardhana Aji, Goh, Shuh Chin, Bao, Shuyu, Lee, Kenneth E., Fitzgerald, Eugene A., Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
Wafer Bonding
Integration
Online Access:https://hdl.handle.net/10356/86269
http://hdl.handle.net/10220/45258

Internet

https://hdl.handle.net/10356/86269
http://hdl.handle.net/10220/45258

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