Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of germanium-tin (GeSn) fins

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patternin...

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Bibliographic Details
Main Authors: Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
Germanium-tin (GeSn)
Strain Relaxation
Online Access:https://hdl.handle.net/10356/86324
http://hdl.handle.net/10220/45270

Internet

https://hdl.handle.net/10356/86324
http://hdl.handle.net/10220/45270

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