Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter...
| Үндсэн зохиолчид: | , , , , |
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| Бусад зохиолчид: | |
| Формат: | Journal Article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2017
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://hdl.handle.net/10356/86545 http://hdl.handle.net/10220/44101 |