Nanoscale phase engineering of niobium diselenide

Nanoscale phase engineering of niobium diselenide

With the continuing miniaturization of semiconductor microelectronics, atomically thin materials are emerging as promising candidate materials for future ultrascale electronics. In particular, the layered transition metal dichalcogenides (TMDs) have attracted a significant amount of attention becaus...

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Bibliographic Details
Main Authors: Bischoff, Felix, Auwärter, Willi, Barth, Johannes V., Schiffrin, Agustin, Fuhrer, Michael, Weber, Bent
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2019
Subjects:
DRNTU::Science::Physics
Transition Metal Dichalcogenide
Niobium Diselenide
Online Access:https://hdl.handle.net/10356/86578
http://hdl.handle.net/10220/48313

Internet

https://hdl.handle.net/10356/86578
http://hdl.handle.net/10220/48313

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