White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits
The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in ma...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/86633 http://hdl.handle.net/10220/45197 |