White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits
The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in ma...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2018
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| Online Access: | https://hdl.handle.net/10356/86633 http://hdl.handle.net/10220/45197 |
| _version_ | 1811694179413131264 |
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| author | Ang, Diing Shenp Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Bera, Milan Kumar Zhang, Haizhong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ang, Diing Shenp Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Bera, Milan Kumar Zhang, Haizhong |
| author_sort | Ang, Diing Shenp |
| collection | NTU |
| description | The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in mainstream integrated circuit manufacturing. In this paper, we present novel experimental evidence showing that electrical conduction through a nanoscale conducting filament can be disrupted upon illumination by white light. The disruption is either permanent or temporary, depending on the current which passed through the filament at the instant of its formation before the process was interrupted. The underlying mechanism is believed to involve photon-induced migration of neighboring interstitial oxygen ions, leading to their recombination with the vacancy sites which made up the conducting filament. This finding suggests possible exploitation for gate oxide reliability renewal and implementation of optical functions in SiO2 or HfO2 based devices whose functionality thus far is only limited to electrical excitation. |
| first_indexed | 2024-10-01T07:03:28Z |
| format | Journal Article |
| id | ntu-10356/86633 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:03:28Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/866332020-03-07T13:57:30Z White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits Ang, Diing Shenp Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Bera, Milan Kumar Zhang, Haizhong School of Electrical and Electronic Engineering Percolation Path Oxide The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in mainstream integrated circuit manufacturing. In this paper, we present novel experimental evidence showing that electrical conduction through a nanoscale conducting filament can be disrupted upon illumination by white light. The disruption is either permanent or temporary, depending on the current which passed through the filament at the instant of its formation before the process was interrupted. The underlying mechanism is believed to involve photon-induced migration of neighboring interstitial oxygen ions, leading to their recombination with the vacancy sites which made up the conducting filament. This finding suggests possible exploitation for gate oxide reliability renewal and implementation of optical functions in SiO2 or HfO2 based devices whose functionality thus far is only limited to electrical excitation. MOE (Min. of Education, S’pore) Accepted version 2018-07-23T09:06:38Z 2019-12-06T16:26:12Z 2018-07-23T09:06:38Z 2019-12-06T16:26:12Z 2015 Journal Article Ang, D. S., Kawashima, T., Zhou, Y., Yew, K. S., Bera, M. K., & Zhang, H. (2015). White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits. ECS Transactions, 69(5), 169-181. 1938-5862 https://hdl.handle.net/10356/86633 http://hdl.handle.net/10220/45197 10.1149/06905.0169ecst en ECS Transactions © 2015 The Electrochemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ECS Transactions, The Electrochemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1149/06905.0169ecst]. 13 p. application/pdf |
| spellingShingle | Percolation Path Oxide Ang, Diing Shenp Kawashima, Tomohito Zhou, Yu Yew, Kwang Sing Bera, Milan Kumar Zhang, Haizhong White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title | White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title_full | White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title_fullStr | White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title_full_unstemmed | White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title_short | White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits |
| title_sort | white light induced annihilation of percolation paths in sio2 and high k dielectrics prospect for gate oxide reliability rejuvenation and optical enabled functions in cmos integrated circuits |
| topic | Percolation Path Oxide |
| url | https://hdl.handle.net/10356/86633 http://hdl.handle.net/10220/45197 |
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