Restoration of postbreakdown gate oxide by white-light illumination
From conductive-atomic-force-microscope probe measurement, we show that electrical conduction through a nanoscale percolation path in the MOSFET gate oxide can be disrupted, either completely or partially, by white-light illumination. This phenomenon is consistently observed in the SiO2 and HfO2 gat...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/86729 http://hdl.handle.net/10220/45199 |