A vacancy-interstitial defect pair model for positive-bias temperature stress-induced electron trapping transformation in the high-κ gate n-MOSFET
Recent device reliability studies have observed the shallow-to-deep transformation of electron-trap states under positive-bias temperature stressing. Being two typical types of defects in the high-κ oxide, the oxygen vacancy and oxygen interstitial have been investigated in many simulations, but res...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/86839 http://hdl.handle.net/10220/45202 |