A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that wer...

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Bibliographic Details
Main Authors: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
Apparent Mean Free Path
Apparent Mobility
Online Access:https://hdl.handle.net/10356/88179
http://hdl.handle.net/10220/44601

Internet

https://hdl.handle.net/10356/88179
http://hdl.handle.net/10220/44601

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