A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that wer...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Online Access: | https://hdl.handle.net/10356/88179 http://hdl.handle.net/10220/44601 |
| _version_ | 1811687218945720320 |
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| author | Ajaykumar, Arjun Zhou, Xing Chiah, Siau Ben |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ajaykumar, Arjun Zhou, Xing Chiah, Siau Ben |
| author_sort | Ajaykumar, Arjun |
| collection | NTU |
| description | The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” (λapp) model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior. |
| first_indexed | 2024-10-01T05:12:50Z |
| format | Journal Article |
| id | ntu-10356/88179 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:12:50Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/881792020-03-07T13:57:30Z A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors Ajaykumar, Arjun Zhou, Xing Chiah, Siau Ben School of Electrical and Electronic Engineering Nanoelectronics Center of Excellence Apparent Mean Free Path Apparent Mobility The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” (λapp) model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior. NRF (Natl Research Foundation, S’pore) 2018-03-23T01:53:33Z 2019-12-06T16:57:48Z 2018-03-23T01:53:33Z 2019-12-06T16:57:48Z 2017 2017 Journal Article Ajaykumar, A., Zhou, X., & Chiah, S. B. (2017). A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors. IEEE Electron Device Letters, 38(8), 1113-1116. 0741-3106 https://hdl.handle.net/10356/88179 http://hdl.handle.net/10220/44601 10.1109/LED.2017.2716411 203647 en IEEE Electron Device Letters © 2017 IEEE. |
| spellingShingle | Apparent Mean Free Path Apparent Mobility Ajaykumar, Arjun Zhou, Xing Chiah, Siau Ben A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title | A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title_full | A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title_fullStr | A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title_full_unstemmed | A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title_short | A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors |
| title_sort | new interpretation for the anomalous channel length dependence of low frequency noise in quasi ballistic transistors |
| topic | Apparent Mean Free Path Apparent Mobility |
| url | https://hdl.handle.net/10356/88179 http://hdl.handle.net/10220/44601 |
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