A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that wer...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/88179 http://hdl.handle.net/10220/44601 |