Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.

Bibliographic Details
Main Authors: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2018
Subjects:
Semiconductor Lasers
Mode-locked Lasers
Online Access:https://hdl.handle.net/10356/88343
http://hdl.handle.net/10220/44689

Internet

https://hdl.handle.net/10356/88343
http://hdl.handle.net/10220/44689

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