Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.
| Egile Nagusiak: | , , , , , , |
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| Beste egile batzuk: | |
| Formatua: | Conference Paper |
| Hizkuntza: | English |
| Argitaratua: |
2018
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| Gaiak: | |
| Sarrera elektronikoa: | https://hdl.handle.net/10356/88343 http://hdl.handle.net/10220/44689 |