Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulati...

Full description

Bibliographic Details
Main Authors: Lian, Jiqing, Zhang, Dawei, Hong, Ruijin, Qiu, Peizhen, Lv, Taiguo, Zhang, Daohua
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
Epsilon-Near-Zero
DRNTU::Engineering::Electrical and electronic engineering
ITO Thin Films
Online Access:https://hdl.handle.net/10356/88830
http://hdl.handle.net/10220/46977

Internet

https://hdl.handle.net/10356/88830
http://hdl.handle.net/10220/46977

Similar Items