Bias temperature instability study on switching defects in SiON and high-K gate dielectrics
Device reliability remains an extremely challenging issue for the state-of-the-art complementary metal-oxide-semiconductor field-effect transistor (CMOS, MOSFET). One of the most challenging reliability issues in CMOS devices is the bias-temperature instability (BTI). Previous studies on SiON and hi...
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| Format: | Thesis |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/88969 http://hdl.handle.net/10220/47652 |