Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs
The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetr...
| Autori principali: | , , , , |
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| Altri autori: | |
| Natura: | Journal Article |
| Lingua: | English |
| Pubblicazione: |
2018
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| Soggetti: | |
| Accesso online: | https://hdl.handle.net/10356/89322 http://hdl.handle.net/10220/44866 |