Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs
The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetr...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/89322 http://hdl.handle.net/10220/44866 |
| _version_ | 1811689978986496000 |
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| author | Dutta, Pradipta Syamal, Binit Koley, Kalyan Dutta, Arka Sarkar, C. K. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dutta, Pradipta Syamal, Binit Koley, Kalyan Dutta, Arka Sarkar, C. K. |
| author_sort | Dutta, Pradipta |
| collection | NTU |
| description | The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrier lowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model also incorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily / lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCAD simulations, with a relative error of around 3–7%. |
| first_indexed | 2024-10-01T05:56:42Z |
| format | Journal Article |
| id | ntu-10356/89322 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:56:42Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/893222020-03-07T14:02:37Z Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs Dutta, Pradipta Syamal, Binit Koley, Kalyan Dutta, Arka Sarkar, C. K. School of Electrical and Electronic Engineering Asymmetric Double Gate Drain Current The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrier lowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model also incorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily / lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCAD simulations, with a relative error of around 3–7%. Published version 2018-05-23T01:59:35Z 2019-12-06T17:22:51Z 2018-05-23T01:59:35Z 2019-12-06T17:22:51Z 2017 Journal Article Dutta, P., Syamal, B., Koley, K., Dutta, A., & Sarkar, C. K. (2017). Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs. Pramana, 89(2), 33-. 0304-4289 https://hdl.handle.net/10356/89322 http://hdl.handle.net/10220/44866 10.1007/s12043-017-1430-z en Pramana © 2017 Indian Academy of Sciences. This paper was published in Pramana and is made available as an electronic reprint (preprint) with permission of Indian Academy of Sciences. The published version is available at: [http://dx.doi.org/10.1007/s12043-017-1430-z]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf |
| spellingShingle | Asymmetric Double Gate Drain Current Dutta, Pradipta Syamal, Binit Koley, Kalyan Dutta, Arka Sarkar, C. K. Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title | Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title_full | Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title_fullStr | Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title_full_unstemmed | Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title_short | Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs |
| title_sort | short channel drain current model for asymmetric heavily lightly doped dg mosfets |
| topic | Asymmetric Double Gate Drain Current |
| url | https://hdl.handle.net/10356/89322 http://hdl.handle.net/10220/44866 |
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