Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications

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This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the tempe...

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Bibliographic Details
Main Authors: Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2018
Subjects:
InAlN/GaN HEMTs
RF performance
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/89717
http://hdl.handle.net/10220/47121

Internet

https://hdl.handle.net/10356/89717
http://hdl.handle.net/10220/47121

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