Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications
This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the tempe...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2018
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| Online Access: | https://hdl.handle.net/10356/89717 http://hdl.handle.net/10220/47121 |
| _version_ | 1811694118605160448 |
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| author | Xing, Weichuan Liu, Zhihong Ng, Geok Ing Palacios, Tomas |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Xing, Weichuan Liu, Zhihong Ng, Geok Ing Palacios, Tomas |
| author_sort | Xing, Weichuan |
| collection | NTU |
| description | This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25 °C to 200 °C. For maximum fT, it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications. |
| first_indexed | 2024-10-01T07:02:30Z |
| format | Journal Article |
| id | ntu-10356/89717 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:02:30Z |
| publishDate | 2018 |
| record_format | dspace |
| spelling | ntu-10356/897172020-03-07T13:57:25Z Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications Xing, Weichuan Liu, Zhihong Ng, Geok Ing Palacios, Tomas School of Electrical and Electronic Engineering InAlN/GaN HEMTs RF performance DRNTU::Engineering::Electrical and electronic engineering This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (fT) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (Id−max) decreases from 1247 mA/mm to 927 mA/mm as the temperature increases from 25 °C to 200 °C. For maximum fT, it drops to 87 GHz and 64 GHz at 100°C and 200°C respectively. These results show that although both DC and RF performances decrease with the increase in temperature, the device still exhibits high mm-wave performance at high temperatures. Thus, InAlN/GaN based HEMTs are very promising for high temperature mm-wave applications. MOE (Min. of Education, S’pore) Published version 2018-12-20T05:03:38Z 2019-12-06T17:31:53Z 2018-12-20T05:03:38Z 2019-12-06T17:31:53Z 2016 Journal Article Xing, W., Liu, Z., Ng, G. I., & Palacios, T. (2016). Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications. Procedia Engineering, 141, 103-107. doi:10.1016/j.proeng.2015.09.222 1877-7058 https://hdl.handle.net/10356/89717 http://hdl.handle.net/10220/47121 10.1016/j.proeng.2015.09.222 en Procedia Engineering © 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). 5 p. application/pdf |
| spellingShingle | InAlN/GaN HEMTs RF performance DRNTU::Engineering::Electrical and electronic engineering Xing, Weichuan Liu, Zhihong Ng, Geok Ing Palacios, Tomas Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title_full | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title_fullStr | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title_full_unstemmed | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title_short | Temperature dependent characteristics of InAlN/GaN HEMTs for mm-wave applications |
| title_sort | temperature dependent characteristics of inaln gan hemts for mm wave applications |
| topic | InAlN/GaN HEMTs RF performance DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/89717 http://hdl.handle.net/10220/47121 |
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