Parasitic analysis and π-type Butterworth-Van Dyke model for complementary-metal-oxide-semiconductor Lamb wave resonator with accurate two-port Y-parameter characterizations
The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid π-type Butterworth-Van Dyke (PiBVD)...
| Հիմնական հեղինակներ: | , , , , , , |
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| Այլ հեղինակներ: | |
| Ձևաչափ: | Journal Article |
| Լեզու: | English |
| Հրապարակվել է: |
2018
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| Խորագրեր: | |
| Առցանց հասանելիություն: | https://hdl.handle.net/10356/89725 http://hdl.handle.net/10220/47127 |