GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heig...

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Bibliographic Details
Main Authors: Deki, M., Nitta, S., Honda, Y., Amano, H., Sandupatla, Abhinay, Arulkumaran, Subramanian, Ng, Geok Ing, Ranjan, Kumud
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
I-V characteristics
Epitaxy
Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/90024
http://hdl.handle.net/10220/49368

Internet

https://hdl.handle.net/10356/90024
http://hdl.handle.net/10220/49368

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