GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heig...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2019
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| Online Access: | https://hdl.handle.net/10356/90024 http://hdl.handle.net/10220/49368 |
| _version_ | 1826121179013840896 |
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| author | Deki, M. Nitta, S. Honda, Y. Amano, H. Sandupatla, Abhinay Arulkumaran, Subramanian Ng, Geok Ing Ranjan, Kumud |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Deki, M. Nitta, S. Honda, Y. Amano, H. Sandupatla, Abhinay Arulkumaran, Subramanian Ng, Geok Ing Ranjan, Kumud |
| author_sort | Deki, M. |
| collection | NTU |
| description | Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heights (ΦB) in the range of 0.73 eV to 0.81 eV. The effective barrier heights (ΦBeff) of SBDs with different DLT also exhibited a similar range of ΦB measured at room temperature. The measured reverse breakdown voltages (VBD) of SBDs increased from 562 V to 2400 V with an increase in DLT. The observation of high VBD of SBDs could be due to the lower effective donor concentration (7.6×1014 /cm3), which was measured from SIMS analysis. The measured VBD of 2400 V is the highest value ever reported for a 30 μm DLT vertical GaN SBD without additional edge termination or field plate (FP). |
| first_indexed | 2024-10-01T05:28:29Z |
| format | Journal Article |
| id | ntu-10356/90024 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:28:29Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/900242020-03-07T14:02:38Z GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates Deki, M. Nitta, S. Honda, Y. Amano, H. Sandupatla, Abhinay Arulkumaran, Subramanian Ng, Geok Ing Ranjan, Kumud School of Electrical and Electronic Engineering Temasek Laboratories I-V characteristics Epitaxy Engineering::Electrical and electronic engineering Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD’s exhibited average barrier heights (ΦB) in the range of 0.73 eV to 0.81 eV. The effective barrier heights (ΦBeff) of SBDs with different DLT also exhibited a similar range of ΦB measured at room temperature. The measured reverse breakdown voltages (VBD) of SBDs increased from 562 V to 2400 V with an increase in DLT. The observation of high VBD of SBDs could be due to the lower effective donor concentration (7.6×1014 /cm3), which was measured from SIMS analysis. The measured VBD of 2400 V is the highest value ever reported for a 30 μm DLT vertical GaN SBD without additional edge termination or field plate (FP). Published version 2019-07-16T05:44:53Z 2019-12-06T17:38:58Z 2019-07-16T05:44:53Z 2019-12-06T17:38:58Z 2019 Journal Article Sandupatla, A., Arulkumaran, S., Ng, G. I., Ranjan, K., Deki, M., Nitta, S., . . . Amano, H. (2019). GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates. AIP Advances, 9(4), 045007-. doi:10.1063/1.5087491 https://hdl.handle.net/10356/90024 http://hdl.handle.net/10220/49368 10.1063/1.5087491 en AIP Advances © 2019 The Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 5 p. application/pdf |
| spellingShingle | I-V characteristics Epitaxy Engineering::Electrical and electronic engineering Deki, M. Nitta, S. Honda, Y. Amano, H. Sandupatla, Abhinay Arulkumaran, Subramanian Ng, Geok Ing Ranjan, Kumud GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title_full | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title_fullStr | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title_full_unstemmed | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title_short | GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates |
| title_sort | gan drift layer thickness effects in vertical schottky barrier diodes on free standing hvpe gan substrates |
| topic | I-V characteristics Epitaxy Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/90024 http://hdl.handle.net/10220/49368 |
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