Electrical and thermal models of CNT TSV and graphite interface
Carbon nanotubes (CNTs) are a suitable replacement for metals commonly used as a fill material for through substrate vias (TSVs). The electrical and thermal contact resistance, however, between the CNT TSVs and the horizontal metal interconnects (typically copper) can limit the use of CNT technology...
Main Authors: | Vaisband, Boris, Maurice, Ange, Tan, Chong Wei, Tay, Beng Kang, Friedman, Eby G. |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Journal Article |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/90234 http://hdl.handle.net/10220/48534 |
Similar Items
-
Dielectric quality of 3D capacitor embedded in through-silicon via (TSV)
by: Lin, Ye, et al.
Published: (2020) -
Assembly process and electrical properties of top-transferred graphene on carbon nanotubes for carbon-based 3-D interconnects
by: Zhu, Ye, et al.
Published: (2021) -
Sessile droplets containing carbon nanotubes : a study of evaporation dynamics and CNT alignment for printed electronics
by: Goh, Guo Liang, et al.
Published: (2020) -
Thermal conductivity enhancement of carbon@ carbon nanotube arrays and bonded carbon nanotube network
by: Samani, Majid Kabiri, et al.
Published: (2021) -
Effects of oscillating pressure on desalination performance of transverse flow CNT membrane
by: Ang, Elisa Yun Mei, et al.
Published: (2020)